1 . 9 0 . 9 5 0 . 9 5 2 . 9 0 . 4 1. 3 2. 4 1 . 0 jiangsu changjiang electronics technology co., ltd sot-23 plastic-encapsulate transistors ktc3880s transistor (npn) features power dissipation p cm: 150 mw (tamb=25 ) collector current i cm: 20 ma collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics( tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 4 v collector cut-off current i cbo v cb = 18 v, i e =0 0.5 a emitter cut-off current i ebo v eb = 4 v, i c =0 0.5 a dc current gain h fe(1) v ce = 6 v, i c = 1 ma 40 200 transition frequency f t v ce = 6 v, i c = 1 ma 500 mhz collector output capacitance c ob v cb = 6 v, i e =0, f= 1 mhz 1 pf noise figure nf v ce = 6 v, i c = 1 ma, f= 100m hz 5 db classification of h fe(1) rank r o y range 40-80 70-140 100-200 marking aqr aqo aqy unit: mm sot-23 1. base 2. emitter 3. collector
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